量子阱厚度对InGaN单量子阱发光二极管静态和动态特性的影响
Abstract
On December 01, 2025, a team of experts led by CHEN Gui-chu from the School of Department of electronic information published an article in the 发光学报, introduces its research progress in the field of single-quantum-well InGaN/GaN light-emitting diodes. Expert CHEN Gui-chu established the circuit model based on standard rate equations, which provides solutions to solve the impact of quantum well thickness on static and dynamic performances of LEDs.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Semiconductor Quantum Structures and Devices
Luminescence Properties of Advanced Materials
Publication details
- Journal / source
- Chinese Journal of Luminescence
- Volume
- 47
- Issue
- 2
- Pages
- 314–320
- Publication date
- 1 January 2026
- Language
- EN