交流电场调控三端QLED器件制备与性能研究

Abstract： Quantum-dot light-emitting diodes (QLEDs) will become a promising candidate in the next-generation display technology due to their high color purity， low power consumption and good solution processability.However， in the traditional DC drive mode， QLED devices are confronted with problems such as severe non-radiative recombi• nation， efficiency degradation and insufficient stability due to unbalanced carrier injections， which limit their appli• cation in the display field.Therefore， this paper proposes a three-terminal QLED device structure based on AC elec• tric field regulation， which optimizes the carrier balance through dynamic modulation of the electric field and signifi• cantly enhances the device performance.Compared with traditional QLED devices， the external quantum efficiency (EQE) of the three-terminal QLED device has increased from 7. 5% to 18. 3%， and the brightness has increased from 6 842 cd/m² to 10 374 cd/m²， with increases of 143.7% and 51.6%， respectively.The experimental results show that the three-terminal QLED device can accurately control the electron mobility and effectively suppress non-ra• diative recombination by utilizing the coordinated regulation of AC waveform ， driving voltage and frequency.This solution not only effectively solves the technical problem of electron-hole mobility mismatch in traditional QLED， but also provides a new technological approach for the structural design of high-performance QLED devices， which is expected to promote the wide application of QLED devices in the display field.Keywords： quantum-dot light-emitting diodes (QLEDs)； three-terminal device； AC electric field regulation； carrier injection； external quantum efficiency 文章编号： 1000