Improved Electrical Performance of Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) Using Al2O3/HfO2 Stacked Gate Dielectrics

Korean Journal of Materials Research 2026 Open access

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Authors: Seokhyun Han, Jihoon Lee, Hyeonwoo Hwang, Jinsung Park, Bohyeon Kim, Junmo Yang, Younghun Han, Juneo Song, Yoon Seok Kim

DOI: 10.3740/mrsk.2026.36.2.70

Cited by: 0

References: 9

Abstract

1. 서 론 차세대 전력 전자 및 고주파 응용 기술의 발전은 전기차, 재생에너지, 통신 시스템의 고속화와 고효율화를 요구하고 있으며, 이에 따라 광대역폭 밴드갭(wide bandgap, WBG) 반도체 소자의 수요가 급격히 증가하고 있다

GaN-based semiconductor devices and materials Semiconductor materials and devices Silicon Carbide Semiconductor Technologies

References 9