Power Comparison for Multi-Bridge-Channel FETs (MBCFETs) and Fin Field Effect Transistors (FinFETs) at 5nm Technology

This project compares Multi-Bridge Channel FET (MBCFET) and FinFET in a 5nm technology node in terms of their appropriateness for future semiconductor use. LTspice/CAD based proprietary MBCFET and FinFET equivalent models were created and simulated in an effort to compare key performance characteristics such as leakage current, dynamic power, and total power consumption. For additional verification of the simulated behaviour, MATLAB based machine learning methods were also utilized to compare the simulated I–V profiles with theoretical FinFET and MBCFET curves. This two-environment methodology— circuit-level simulation and data-driven verification is a sound foundation for device performance analysis, warranting the proposal of MBCFET as an energy-efficient in future semiconductor technology.