ZnTe Thin Films: Deposition Methods, Physical Properties, and Device Prospects

Zinc telluride (ZnTe) is a II–VI compound semiconductor with a direct wide band gap (~2.26 eV at room temperature), high optical absorption coefficient, and good chemical stability. These properties make ZnTe thin films highly attractive for applications in optoelectronics, including photodetectors, solar cells, light‐emitting devices, transparent electronics, and heterojunction structures. In recent years, considerable research efforts have been devoted to the growth, doping, characterization, and device integration of ZnTe thin films using various physical and chemical deposition techniques. This review provides a comprehensive overview of ZnTe thin films, covering crystal structure, fundamental properties, deposition methods, doping strategies, defects and transport mechanisms, characterization techniques, and major applications. Current challenges and future research directions are also discussed, with particular emphasis on improving film quality, electrical conductivity, and device performance.