Photocurrent generation in perovskite quantum dots and porous silicon heterostructure

We investigate the enhanced efficiency of photocurrent in the heterojunction structure of perovskite quantum dots and porous silicon. Porous silicon is a material that generates low dark current and high photocurrent under dark and light condition, respectively. To improve the efficiency of this photocurrent property, perovskite quantum dots, which have a high absorption rate of visible light, are conjugated with porous silicon. First, porous silicon with photocurrent responsiveness is produced by metal-assisted chemical etching. Perovskite quantum dots are then uniformly applied on the top of the porous silicon. The photocurrent properties are evaluated by varying the wavelength of light irradiating the prepared sample. The results show that at a wavelength of 520 nm, the photocurrent responsivity of the sample with perovskite is amplified by about 30 times. This has the potential to be widely applied to the development of photosensors with high responsivity around 520 nm.