Next-Generation Devices Enabled by RF Sputtered Wide Bandgap Semiconductors

RF-sputtered wide-bandgap (WBG) semiconductors demonstrate significant potential for next-generation electronics, optoelectronics, and power electronics devices due to their exceptional physical, thermal, and chemical stability. This review comprehensively explores their capabilities, the challenges associated with their synthesis and integration, as well as the critical process parameters that influence film quality. Additionally, it provides targeted optimization strategies and practical recommendations aimed at improving the structural and functional performance of RF-sputtered WBG semiconductor thin films, thereby enhancing their applicability in next-generation device technologies.