FinFET vs Planar MOSFET: A Performance-Based Comparative Study

Intensive scaling of integrated circuits is one of the crucial factor for achieving high performance. However, this is pushing planar MOSFET to its physical limitations. FinFET has recently emergedas a promising alternative to planar MOSFETs, offering improved efficiency. This study presents acomparative analysis of FinFET and planar MOSFET technologies, focusing on their performance,structural advantages, and challenges in advanced technology nodes. The study highlights thesuperior short channel effect (SCE) control, reduced leakage current, reduced subthreshold slope,drain-induced barrier lowering (DIBL), and improved I-V and C-V characteristics of FinFETscompared to planar MOSFETs are been discussed. Tools like LTspice and Scilab are used forsimulation, as LTspice allows the simulation of MOSFET and FinFET behavior using detailedmodels, and Scilab provides a powerful environment for performing mathematical operations,plotting graphs, and analyzing simulation results obtained from LTspice. The extracted electricalparameters show FinFETs are more attractive for digital and low-frequency RF applications and areexpected to dominated planar MOSFETs in future generations. This comparative study providesvaluable insights into the growing dominance of FinFETs in high-performance circuits.