Enhanced Mobility in SiC (0001) MOSFETs Using a Decoupled Plasma Nitridation (DPN) Process and Oxide Deposition

Materials science forum 2026 Open access

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Authors: Koushik Ramadoss, Joshua Holt, L. Daté, Safdar Muhammad, Jesse Kalliomäki, Fernanda Albrechtvechietti, William Charles, Athena Pang, Shubhendra Jain, B. Briggs, Ludovico Megalini, Michael Chudzik
+2 more Dallas Morisette, James Cooper
DOI: 10.4028/p-8xxbpt
Cited by: 1
References: 13

Abstract

In this work, we demonstrate a novel oxidation-free gate oxide process consisting of a two-step surface preparation treatment, followed by atomic layer deposition of SiO 2 and a post-deposition anneal in nitrogen. The surface treatment includes a 1300°C anneal in hydrogen and dilute silane, followed by decoupled plasma nitridation (DPN). Long channel MOSFETs fabricated with this process show a 1.5X improvement in peak field effect mobility compared with devices utilizing a standard thermal oxide and NO anneal. The MOSFETs had a positive threshold voltage, low gate leakage, and a breakdown field of nearly 10 MV/cm.

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Materials science forum
Publisher
Trans Tech Publications, Ltd.
Volume
1192
Pages
47–52
Publication date
18 May 2026