A Study on the Synthesis and Evaluation of Si/SiC Powders for SiC Wafers Fabrication and Si-Based Devices

This study delves into the synthesis of high-purity SiC powders utilizing two distinct silicon (Si) sources of recycled Si wafers and back-grind wastewater—both of which are abundant by-products in semiconductor manufacturing processes. The synthesis involved the high-temperature reaction of these Si sources with ultra-high-purity graphite (>6N) at temperatures exceeding 2100°C. The resulting α-phase SiC powders derived from previously used Si wafers demonstrated unparalleled quality, achieving a purity level surpassing 99.9999% and exhibiting particle sizes exceeding 500 µm. These characteristics render them highly suitable for the fabrication of SiC wafers, a cornerstone of advanced semiconductor applications. This research underscores the potential of leveraging industrial by-products as sustainable Si sources for SiC synthesis, highlighting the superiority of α-phase SiC produced from recycled Si wafers in high-purity applications.