Electrochemical Studies on a Thin Film of Nickel Sulphide Prepared by SILAR Method

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Authors: N Karthika, B Gomathi, A L Jewelcy, al et
Cited by: 0

Abstract

In the present study, a thin film of NixSy was deposited on an ITO GP by SILAR method.This film was characterized by UV-vis reflectance and FTIR spectroscopy.UV-vis reflectance revealed that Eg from NixSy was 1.55 eV.After coating, ITO GP Eg decreased from 1.88 to 1.55 eV.This indicates that the film functioned as a semi conductor.UV-vis absorbance showed that the film absorbance occurred at 322.00, 388.80 and 396.25 nm, with peak intensity of 1.229, 0.934 and 0.916 AU, respectively.FTIR spectra confirmed NixSy formation on ITO GP by SILAR technique.Thus, it was encouraging to note that NixSy was successfully prepared by this method.Electrochemical studies, such as polarization technique and AC impedance spectra revealed that current flowing through ITO GP increased after NixSy coating by SILAR method.These findings may be useful for solar panel systems used in marine environments.

Fields of Study & Subjects

Chalcogenide Semiconductor Thin Films Advanced Materials and Semiconductor Technologies TiO2 Photocatalysis and Solar Cells

Publication details

Journal / source
Portugaliae electrochimica acta
Volume
44
Issue
1
Pages
69–83
Publication date
1 January 2026
Language
EN