THE EFFECT OF SELENIUM ADDITIONS ON THE ELECTROPHYSICAL AND RECORDING PROPERTIES OF CdZnTe-BASED DETECTORS

The results of quantitative investigations of the influence of impurities and structural defects content on the electrophysical and detector properties of Cd0.9Zn0.1Te1-ySey, in particular Cd0.9Zn0.1Te0.98Se0.02 grown by the Bridgman method and Cd0.9Zn0.1Te0.93Se0.07 obtained by the heater traveling method, are highlighted. Studies have been carried out on the effect of defects on the change in resistivity ρ, free charge carrier concentration, Fermi level F, and charge collection efficiency η in radiation detectors based on CdZnTeSe:In at the temperature of 25°C. The dependences of the changes in ρ, F, and η on the content of impurities, cadmium vacancies and secondary tellurium phases were established. The conditions for maintaining the high-resistance state and response to irradiation in a detector based on Cd0.9Zn0.1Te1-ySey have been determined.