Atomic Layer Deposition - ZnO - DEZn - H2O

Open Research Knowledge Graph (ORKG) 2026 Dataset Open access

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Authors: Vesa Lujala, Jarmo I. Skarp, Markku Tammenmaa, Tuomo Suntola, A. Shimizu, Sutichai Chaisitsak, T. Sugiyama, A. Yamada, M. Konagai, Jari E. M. Malm, Elina Sahramo, Maarit J. Karppinen
+1 more Robin H. A. Ras
DOI: 10.48366/r1583016
Cited by: 0

Abstract

This comparison summarizes reported Atomic Layer Deposition (ALD) processes for zinc oxide (ZnO) thin films using diethylzinc (DEZn) as the metal precursor and water (H₂O) as the coreactant. It highlights key process parameters and outcomes across studies to enable direct comparison of growth conditions, film properties, and performance metrics for the DEZn/H₂O ALD system.

Fields of Study & Subjects

Semiconductor materials and devices ZnO doping and properties Thin-Film Transistor Technologies

Publication details

Journal / source
Open Research Knowledge Graph (ORKG)
Publication date
11 February 2026
Language
EN
Document type
Dataset