Three-dimensional topological insulator feature of ternary chalcogenide Ge2Bi2Te5

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Authors: Shangjie Tian, Yuchong Zhang, Chenhao Liang, Yuqing Cao, Wenxin Lv, Xingyu Lv, Zhijun Wang, Tian Qian, Hechang Lei, Shouguo Wang
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Abstract

The exploration of novel topological insulators (TIs) beyond binary chalcogenides has been accelerated in pursuit of exotic quantum states and device applications. Here, the layered ternary chalcogenide Ge2Bi2Te5 is identified as a three-dimensional TI. The bulk electronic structure of Ge2Bi2Te5 features a hole-type Fermi surface at Fermi level EF, which dominates the transport properties. Moreover, an unoccupied topological surface state with a Dirac point located at 290 meV above EF has been observed. Theoretical calculations confirm a bulk bandgap and a nontrivial Z2 topological invariant (000;1). The present study demonstrates that the material family of layered tetradymite-like ternary compounds is an important platform to explore exotic topological phenomena.

Fields of Study & Subjects

Topological Materials and Phenomena 2D Materials and Applications Surface and Thin Film Phenomena

Publication details

Journal / source
arXiv (Cornell University)
Publication date
16 January 2026
Document type
Preprint