Thermal Stability and Phase Transformation of Conductive $α$-$(\mathrm{Al}_{x}\mathrm{Ga}_{1-x})_{2}\mathrm{O}_{3}/\mathrm{Ga}_{2}\mathrm{O}_{3}$ Heterostructures on Sapphire Substrates

Thermal stability and phase transformation of conductive $α$-$(\mathrm{Al}_{0.16}\mathrm{Ga}_{0.84})_{2}\mathrm{O}_{3}/\mathrm{Ga}_{2}\mathrm{O}_{3}$ heterostructures on sapphire substrates were investigated using in situ high-temperature X-ray diffraction (HT-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Conductive $α$-$(\mathrm{Al}_{0.16}\mathrm{Ga}_{0.84})_{2}\mathrm{O}_{3}/\mathrm{Ga}_{2}\mathrm{O}_{3}$ heterostructures with fluorine (F) doping were grown by mist chemical vapor deposition on sapphire substrates, achieving a Hall mobility of $28~\mathrm{cm^{2}\,V^{-1}\,s^{-1}}$ and an electron concentration of $1.4\times10^{20}~\mathrm{cm^{-3}}$. The heterostructures exhibited thermal stability up to approximately $550$--$