Molecular Beam Epitaxy of Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response

arXiv (Cornell University) 2026 Preprint Open access

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Authors: Adriano Notarangelo, R. Songmuang, Mostafa Saleh, Natthawadi Buatip, Ileana Florea, Philippe Vennéguès, Aidan F. Campbell, Hans Tornatzky, Jonas Lähnemann, Thomas Auzelle, Lutz Geelhaar, O. Brandt
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DOI: 10.48550/arxiv.2602.12956
Cited by: 0

Abstract

We study the molecular beam epitaxy of self-assembled Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N nanowires on conductive TiN layers and demonstrate their application in piezoelectric nanogenerators. Wurtzite Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N nanowires with uniform Sc incorporation are grown across a wide composition range (0

Fields of Study & Subjects

GaN-based semiconductor devices and materials Acoustic Wave Resonator Technologies Nanowire Synthesis and Applications

Publication details

Journal / source
arXiv (Cornell University)
Publication date
13 February 2026
Language
EN
Document type
Preprint