Conductivity scaling of the anomalous Hall effect in the altermagnetic semiconductor α-MnTe

α-MnTe is a prototypical altermagnet exhibiting a strong anomalous Hall effect (AHE), despite having a nearly vanishing magnetization. Lately, sample-to-sample variations of the amplitude of the AHE have raised concerns of a possible defect related origin, especially in thin films. Here, we study the AHE in α-MnTe films grown on SrF2 that have the crystal structure and m'm'm magnetic point group symmetry expected for bulk. By studying the scaling of the AHE with conductivity for those films and previously reported measurements in the literature, we find that sample-to-sample variations are well explained by a scaling law consistent with a hopping origin. Importantly, a comparison with other magnetic semiconductors reveals the colossal amplitude of the AHE of α-MnTe compared to its measured spontaneous magnetization from magnetometry and polarized neutron reflectivity. Our findings address the important fundamental question of the origin of the AHE of α-MnTe and further demonstrate the potential of altermagnets as promising spintronic materials.