Optimization of perovskite memristors functionality via singlewalled carbon nanotube integration

In the study, the performance and working mechanisms of memristors based on organicinorganichalide perovskite (OIHP) materials with two distinct configurations: ITO/PEDOT:PSS/Cs0.15MA0.15FA0.7Pb(I0.8Br0.2)3/InGa and PSS/Cs0.15MA0.15FA0.7Pb(I0.8Br0.2)3/CNT/InGaare investigated. Perovskite materials have been shown to exhibit resistive switching behaviorsuitable for memristor applications due to their ion migration and filament formation properties.Here, the impact of incorporating single-walled carbon nanotubes (SWCNTs) into thestructure is examined. Results indicate that the presence of SWCNTs enhances device performance,including increased current density and improved on/off ratios. These enhancementsare attributed to the excellent electrical conductivity and filament formation properties ofSWCNTs.