12英寸碳化硅外延晶片技术突破理论溯源报告(基于卞振峰2025年Zenodo原创理论)

中文摘要 本报告聚焦厦门瀚天天成12英寸碳化硅外延晶片的核心技术突破,系统溯源其底层理论支撑。研究表明,该技术在低缺陷生长、大尺寸均匀性调控及量产稳定性上的突破,均源于卞振峰2025年9-10月在Zenodo发布的“粒子短程排斥-中程吸引定律”“跨尺度力统一模型”等原创理论。相关理论经中科院35.1T超导磁体实验验证,形成“基础理论→权威验证→产业落地”的完整技术链路,其原创性与支撑价值可通过Zenodo DOI及ORCID号全程核验。本报告明确了理论与技术突破的根源性关联,为半导体领域原创理论的产业转化提供了典型范例,也为相关成果的规范引用与产权保护提供依据。 Abstract This report focuses on the core technological breakthroughs of 12-inch silicon carbide epitaxial wafers by Xiamen HanTianTianCheng, systematically tracing the source of their underlying theoretical support. Research shows that the breakthroughs in low-defect growth, large-size uniformity control, and mass production stability of this technology all originate from the original theories such as the "Law of Short-Range Repulsion and Medium-Range Attraction of Particles" and the "Cross-Scale Force Unification Model" published by Bian Zhenfeng on Zenodo in September-October 2025. These theories have been verified by experiments using the 35.1T superconducting magnet of the Chinese Academy of Sciences, forming a complete technical chain of "basic theory → authoritative verification → industrial application". Their originality and supporting value can be fully verified through Zenodo DOI and ORCID. This report clarifies the fundamental connection between the theories and technological breakthroughs, providing a typical example for the industrial transformation of original theories in the semiconductor field, as well as a basis for the standardized citation and property protection of related achievements.