Microtexture-Gated Environmental Activation in a Single-Field S3 Ontology

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Authors: Mustafa Boudjerada
Cited by: 0

Abstract

This note derives a smoothness suppression theorem for a topological activation gate (\chi=|B_\mu B^\mu|/\Lambda_B^6) built from the Skyrme current in a single-field (S^3\simeq SU(2)) ontology. The result forces a microtexture–or–ultraIR fork: significant activation on macroscopic scales requires winding microstructure at (\ell_B=\Lambda_B^{-1}) unless (\Lambda_B) is ultra-infrared. A simple coarse-grained occupancy model and sharp falsifiers are provided.

Fields of Study & Subjects

Topological Materials and Phenomena Quantum and electron transport phenomena Surface and Thin Film Phenomena

Publication details

Journal / source
Zenodo (CERN European Organization for Nuclear Research)
Publication date
4 January 2026
Document type
Preprint