Ion-Based Data Storage Technologies: Principles, Advancements, Comparisons, and Applications
Abstract
This supporting research paper provides a comprehensive technical survey of ion‑based data storage technologies, offering the scientific and engineering context underlying the Ion‑Based Continuity Memory Architecture (ICMA). It reviews the fundamental principles of ion migration, resistive switching, electrochemical modulation, and mixed ionic–electronic conduction across ReRAM, OECTs, ion‑gel transistors, and related iontronic devices. The document synthesizes recent advancements in materials, device architectures, fabrication techniques, performance metrics, neuromorphic applications, and in‑memory computing. It also maps the current industrial landscape, including leading research institutions, commercial players, and emerging startups driving innovation in ion‑based memory systems. This survey serves as a technical foundation for ICMA by outlining the state of the art in ion‑centric storage mechanisms, reliability considerations, sustainability factors, and commercialization pathways, enabling readers to understand the broader technological ecosystem in which ICMA operates.
Fields of Study & Subjects
Advanced Memory and Neural Computing
Advanced Data Storage Technologies
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- Zenodo (CERN European Organization for Nuclear Research)
- Publication date
- 8 January 2026