Reliability and Interface Analysis of Microwave-Annealed Sol–Gel Derived TiO₂ and NiTiO₃ Thin Films for MOS Applications

This dataset supports the manuscript “Reliability and Interface Analysis of Microwave-Annealed Sol–Gel Derived TiO₂ and NiTiO₃ Thin Films for MOS Applications.” It contains both exact experimental summaries and reconstructed numerical datasets corresponding to the figures in the paper. The Excel file Microwave_MOS_All_Tables.xlsx includes all tabulated results reported in the manuscript, organized into four sheets: microstructural parameters (crystallite size, RMS roughness, and dominant phase), interface characteristics (interface trap density, C–V hysteresis, and accumulation capacitance), leakage current statistics, and Weibull reliability parameters (shape factor, characteristic life, and failure mode). These values are exact reproductions of Tables 1–4 in the article. The CSV files provide numerical datasets corresponding to the graphical figures: Fig5_CV_Reconstructed.csv – Capacitance–voltage (C–V) characteristics of TiO₂ and NiTiO₃ MOS capacitors at multiple frequencies. Fig7_IV_Reconstructed.csv – Leakage current density versus electric field for microwave-annealed and conventionally annealed devices. Fig6_Stress_Reconstructed.csv – Bias-stress induced leakage current drift as a function of time. Fig9_Weibull_Reconstructed.csv – Weibull reliability data showing failure probability versus electric field. The figure datasets are reconstructed from the published plots using axis scaling and curve trends to enable reuse, replotting, and comparative analysis. While they preserve the physical behavior and trends reported in the manuscript, they represent digitized approximations rather than raw instrument outputs. Together, these files enable independent verification, meta-analysis, and reuse of the reported results for further research in microwave-processed sol–gel dielectrics and MOS reliability studies.