SEE and beam characterization with high energy heavy ions at HIMAC

Single event effect cross sections and energy deposition events in silicon diodes were measured with high-energy heavy ions at HIMAC, in Japan, by varying LETs through PMMA degraders. Primary beam energies of 178 MeV/n 132Xe and 320 MeV/n 84Kr, measured at the device under test position, were employed. Results were compared to those from other heavy ion facilities, highlighting the importance of facility inter-comparisons. Considerations about single event upset cross sections, measured with and without the package and with fully fragmented beams, are outlined.