A Unified Semiconductor Memory Architecture Eliminating Volatility Hierarchies

This paper presents a concrete semiconductor memory architecture that eliminates the traditional volatility hierarchy using only conventional materials, devices, and operating conditions. Building on the admissibility of a unified information phase, we show that fast access, long-term retention, multi-level storage, and uniform read–write semantics can be realized within a single architecture. The design employs established resistive memory elements, verified programming, and differential readout to bound variability and ensure stability without refresh. No exotic materials, low-temperature operation, or speculative device physics are required. The analysis demonstrates that architectural unification is achievable within mature fabrication constraints. As a result, the historical separation between memory and storage is shown to be an architectural choice rather than a physical necessity, providing a realizable foundation for subsequent performance and semantic analysis.