STUDY OF TEMPERATURE DEPENDENCE OF ELECTROPHYSICAL PROPERTIES OF Sn1-xPrxTe CRYSTALS
Abstract
The results of the study of the electrophysical properties of Sn1-xPrxТе crystals in a wide temperature range are presented. The temperature dependences of the electrical conductivity, Hall and thermoelectric coefficients of these crystals were studied, and based on the experimental results, the fundamental semiconductor parameters of these crystals: the width of the forbidden zones, the type of conductivity, the concentration and mobility of free charge carriers were determined in the temperature range of 100-375 K.
Fields of Study & Subjects
Advanced Thermoelectric Materials and Devices
Advanced Semiconductor Detectors and Materials
Semiconductor materials and interfaces
Publication details
- Journal / source
- Zenodo (CERN European Organization for Nuclear Research)
- Publication date
- 15 January 2026