Aether-Gated Coherence as the Missing Light–Matter Interaction: A QMU Framework for Nanoscale Tunneling and Silicon-Integrated Emitters

Description As electronic devices shrink into the nanoscale regime, two bottlenecks become increasingly decisive for future computing architectures: (i) transistor downscaling is limited by rapidly rising gate leakage and heat dissipation, commonly attributed to quantum tunneling through ultrathin barriers; and (ii) silicon photonics promises photonic information transport, yet silicon remains a poor on-chip light emitter, making the integrated laser (or any truly native silicon source) a persistent challenge. This work reframes both bottlenecks as a single boundary-physics puzzle: stable conversion between transport participation and matter participation fails when a junction cannot maintain a coherent boundary gate state. In the Aether Physics Model (APM), boundary response is expressed as an event-admission process governed by a coherence window and a threshold landmark. The central proposal is that nanoscale “tunneling leakage” is not only a thickness/barrier phenomenon, but an unintended boundary admission of conversion events that can be mediated by a magnetic-linkage channel (a magnetic bridge) maintained through Aether alignment. This provides a concrete, test-oriented mechanism for what is typically treated as a probabilistic transmission factor in WKB-style tunneling models. To make the framework experimentally decidable, the paper introduces sensitivity-ratio protocols that distinguish electrostatic-primary control from magnetic-primary control of the gate variables. The key litmus test is whether extracted leakage landmarks (coherence-window and threshold analogs) shift significantly under a magnetic perturbation while electrostatic conditions are held constant. The same boundary-gate language is then applied to the silicon emitter problem, treating “on-chip emission” as an intended admission-gate design problem rather than a requirement that bulk silicon behave like a direct-gap gain medium. A compact, QMU-normalized effective boundary Lagrangian is provided as a mathematical container for the competing electrostatic and magnetic control couplings. This formalism is not offered as a replacement for full semiconductor device simulation; its role is to encode the missing boundary interaction in a minimal, falsifiable structure and to guide experiments that can confirm or refute magnetic-primary control in leakage-dominant regimes. How to cite Please cite this Zenodo record DOI (10.5281/zenodo.18463128). If referencing QADI infrastructure, also cite the QADI Community DOI overview (Zenodo DOI: 10.5281/zenodo.17479314).