Intrinsic Dielectric Reliability in Semiconductor Materials: A Structural Admissibility Condition for Long-Term Electrical Integrity

Description This prior-art / structural admissibility analysis establishes intrinsic dielectric reliability as a necessary condition for semiconductor materials, dielectrics, insulators, and interface layers that claim long-term electrical integrity, stability, or industrial deployability. The document is strictly non-constructive: it discloses no compositions, stacks, device structures, fabrication steps, annealing protocols, operating voltages, geometries, or reliability metrics. Instead, it formalizes domain-independent invariants under which claimed dielectric reliability must arise as an identity-level property rather than from operational defect annealing, charge trapping or leakage compensation, conditioning cycles, or predictable corrective intervention. The condition constrains patentability at the level of enablement/sufficiency, inventive step, and industrial applicability.