Framwork of Quantum Hall Effects in Low Dimensional Electron Systems
Abstract
The Quantum Hall Effect (QHE) in lowdimensional electron systems represents one of the most significant discoveries in condensed matter physics, revealing topologically protected quantization of Hall conductance under strong magnetic fields and low temperatures. This paper presents a comprehensive study of integer and fractional quantum Hall effects with emphasis on lowdimensional electron gases, quantum wells, and two-dimensional materials, highlighting major theoretical and experimental contributions from Indian research groups. The study synthesizes Indian work on GaAs/AlGaAs heterostructures, graphenebased systems, and quantum transport measurements, and proposes an experimental methodology framework consistent with laboratory practices in Indian nanoscience institutes. Simulated analytical results are presented to illustrate quantized conductance behavior and carrier density dependence. The discussion connects Indian advances in lowdimensional transport physics with emerging directions in topological electronics and quantum metrology. The study concludes that Indian contributions have significantly strengthened experimental and theoretical understanding of quantum Hall physics and continue to influence next-generation lowdimensional electronic systems.
Fields of Study & Subjects
Quantum and electron transport phenomena
Semiconductor Quantum Structures and Devices
Topological Materials and Phenomena
Publication details
- Journal / source
- Zenodo (CERN European Organization for Nuclear Research)
- Publication date
- 11 February 2026
- Language
- EN