Modeling & Simulation of InGaP/InGaAs/Ge Triple-Junction Solar Cells By Using PyAMS

This work presents a physics-based modeling and simulation framework for a monolithic InGaP/InGaAs/Ge triple-junction solar cell implemented using the PyAMS analog mixed-signal simulation environment. The model employs a single-diode equivalent circuit representation for each sub-cell and incorporates temperature-dependent semiconductor parameters including bandgap variation, saturation current, and thermal voltage. The simulation performs DC sweep analysis to extract key photovoltaic performance metrics such as short-circuit current, open-circuit voltage, maximum power point, fill factor, and efficiency. Results demonstrate realistic behavior of multi-junction solar cells, including voltage summation across series-connected junctions and temperature sensitivity of electrical characteristics. An additional parametric study analyzes temperature dependence from 0 °C to 85 °C, showing a decrease in open-circuit voltage and overall power output with increasing temperature, consistent with semiconductor physics theory. This model serves as a flexible research and educational platform for studying advanced photovoltaic device behavior, circuit-level solar modeling, and performance optimization of multi-junction solar technologies.