Data supporting: Role of the Oxide in Memristive Quasi-1D Silicon Nanowire

This dataset contains the experimental data supporting the publication: Role of the Oxide in Memristive Quasi-1D Silicon Nanowire. The dataset includes electrical characterization data of silicon nanowire (SiNW) memristive devices with Ni/NiSi Schottky contacts, scanning electron microscopy (SEM) images, and related experimental outputs corresponding to the figures presented in the manuscript. Devices consist of quasi-1D silicon nanowires forming a back-to-back Schottky diode structure. The data include I–V measurements under various sweep rates, plasma treatments, and annealing conditions, as described in the publication. Files are organized according to the corresponding figure numbers. Each figure folder contains the numerical measurement data and the associated figure image. The numerical files correspond to instrument-generated outputs without artificial reconstruction unless explicitly stated in the manuscript.