Interfaces between beta-Ga2O3 (100) and 3C-SiC (001) with oxidation of SiC

Zenodo (CERN European Organization for Nuclear Research) 2026 Dataset Open access

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Authors: Aldo Ugolotti, Emilio Scalise, Leo Miglio, Marica Licciardi
DOI: 10.5281/zenodo.18669767
Cited by: 0

Abstract

Collection of the structures optimized for the analysis of the interfaces of beta-Ga2O3 (100) on 3C-SiC (001). The files are named with the following scheme: POSCAR_A_B_C, where A labels the kind of slab, e.g. clean or oxidized surface and the material (3C-SiC vs Ga2O3), B labels the termination, and C labels the specific model/configuration, e.g. the type of reconstruction or the adsorption site, as reported by the work of Licciardi et al.[1]. [1]: http://arxiv.org/abs/2602.19820

Fields of Study & Subjects

Ga2O3 and related materials Silicon Carbide Semiconductor Technologies Semiconductor materials and devices

Publication details

Journal / source
Zenodo (CERN European Organization for Nuclear Research)
Publication date
17 February 2026
Language
EN
Document type
Dataset