Zener Tunnelling in Germanium ON Insulator FET

In this paper a Zener Tunnelling Tunnel Diode Germanium On Insulator FET(ZT-TDGeOIFET)is proposed and analysed to verify the reduction of OFF current(𝐼𝑂𝐹𝐹), Subthreshold Swing(SS), and gate substrate capacitance 𝐶𝑔𝑠𝑢𝑏 are independent of material. A 𝑃+ region isembeddeded below source and drain of Germanium On Insulator FET(GeOIFET) to achievethis. This is done to validate the behaviour of 𝑃+ in Zener Tunnelling Tunnel Diode Partiallydepleted Silicon On Insulator (ZT-TDPDSOI). The results are validated using Electric field,Fermilevel, Surface potential, Surface electron concentration, hole concentration (HC).Furthermore, the effect of slope of conduction band for various doping is also studied. FermiLevel (FL) and Valence Band Energy (VBE) are used to explain the concentration variationwithin the channel near the drain-channel region. (BPA). All simulations were performed usingTCAD. It is noted that there is a reduction of OFF current(𝐼𝑂𝐹𝐹), Subthreshold Swing (SS), andgate substrate capacitance 𝐶𝑔𝑠𝑢𝑏 in ZT-TDGeOIFET. The non dependance of material on OFFcurrent(𝐼𝑂𝐹𝐹), Subthreshold Swing (SS), and gate substrate capacitance (𝐶𝑔𝑠𝑢𝑏) is discussedhere.