Dataset for Topological Dislocation Response in Elementary Semiconductor

This dataset contains all the data and code one needs to generate the dislocation spectrum for elementary semiconductors including silicon, diamond, germainum and black phosphorus, with a slight modification for different materials in the file edge_spectrum_2D_Silicon_0.000.py, where 0.000 is the example value of the good momentum quantum number along the dislocation. The .dat files are data files recording the hopping parameters in the tight binding models of silicon, germanium and diamond were generated from tight binding studio https://arxiv.org/abs/1910.02917 and that of BP from https://journals.aps.org/prb/abstract/10.1103/PhysRevB.104.125302. The .npy files are respectively the energy level, inverse participation ratio and the momentum quantum number k being simulated.