Importance of site occupation for defect-assisted nonradiative recombination in semiconductor alloys

The data archive for “Importance of site occupation for defect-assisted nonradiative recombination in semiconductor alloys” contains the complete numerical output behind every figure in the article. All raw data underlying the plots are provided as .dat files. Each .dat file lists the numerical values used for generating the corresponding figures. All atomic structures discussed in the manuscript are supplied as POSCAR files in VASP format. Additionally, for selected structures and states, the corresponding charge density files (PARCHG) are provided, enabling visualization of both the atomic structure and the spatial distribution of the charge density.