FOTOELEKTRIK O'TKAZUVCHANLIK ORQALI GIDRIDLANGAN AMORF KREMNIY PARDALARIDA REKOMBINATSION JARAYONLARNI O'RGANISH.

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Authors: Babaxodjayev Umar Samsakxodjayevich, Nabiyev A'zamjon Botirjonovich, Usmanov Muhammad Abduxalil o'g'li, Botirjonov Akmaljon A'zamjon o'g'li, Abduvaliyev Abdulaziz Abdukarim o'g'li
DOI: 10.5281/zenodo.18978211
Cited by: 0

Abstract

Ushbu maqolada a-Si:H pardalarida stasionar fotoelektrik o‘tkazuvchanlikning haroratga bog‘liqligi (The method temperature dependence Steady-State Photoconductivity) orqali rekombinatsion jarayonlar mexanizmi o‘rganilgan. Uzluksizlik va elektroneytrallik tenglamalari yechimlaridan foydalangan holda, kuchli legirlangan a-Si:H pardalar uchun olingan σ ~ σ0(1/T) bog‘lanishidagi nomonotonlik, turli harorat oralig‘ida D-markazlarda rekombinatsion jarayonlarning turlicha sodir bo‘lishi natijasida yuzaga kelishi ko‘rsatilgan.

Fields of Study & Subjects

Silicon and Solar Cell Technologies Semiconductor materials and interfaces Thin-Film Transistor Technologies

Publication details

Journal / source
Universal.
Publication date
12 March 2026