DETERIORATION OF SHORT CHANNEL EFFECTS IN DUAL HALO BASED TRIPLE MATERIAL SURROUNDING GATE (DH-TMSG) MOSFET

In the proposed work, the analytical model for Surface potential and Electric field has been carried out in a novel structure named dual halo triple material Surrounding-gate metal-oxide-semiconductor field effect transistor (DHTMSG). The new device has been incorporated with symmetrical dual halo regions near source and drain ends, while the gate terminal consists of three different metals with different work functions. The results prove that the device significantly deteriorates the short channel effects which are studied by analytical model for surface potential and electric field using parabolic approximation method. The analytical results are endorsed by the simulation results.