Influence of Carrier Generation and Recombination on Memristivity

In this work, the influence of excess charge carrier generation and recombination processes in nanostructured materials is systematically incorporated to develop a theoretical framework for deriving the voltage–current (V–I) characteristics of a memristor. At the nanoscale, carrier dynamics play a crucial role in determining the electrical response of materials, and their contribution becomes particularly significant in devices exhibiting memory effects. By accounting for these excess carrier phenomena, the proposed approach provides a physically meaningful description of memristive behavior without relying exclusively on ionic migration mechanisms. The resulting V I−characteristics obtained from this model exhibit a pinched hysteresis loop, which is widely recognized as the defining fingerprint of memristive systems. The emergence of this characteristic loop confirms the validity of the proposed framework and demonstrates its ability to capture the essential features of memristor operation. Furthermore, the analysis indicates that memristivity can be understood as an intrinsic property arising from the fundamental carrier dynamics within nanostructured materials. Therefore, the present approach offers an alternative and potentially viable pathway for explaining the underlying physical origin of memristivity, particularly in nanostructures where conventional ion-based models may be insufficient.