A sub-10ms neural dynamical system based on phase change memristors

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Authors: Cai Lei, Tao Yaoyu, Xie Chenchen, Yan Longhao, Li Shiqian, Shen Ruihong, Pan Zelun, Wang Xile, Wang Bowen, Shi Daijing, Zhu Yihang, Zhang Teng
+5 more 朱一新 ZHU Yixin, Li Xi, 宋致堂 Song Zhitang, Huang Ru, Yang Yuchao
Cited by: 2

Abstract

A sub-10ms neural dynamical system based on phase change memristors Introduction High-fidelity geometry under strict topological constraints remains a critical challenge for realizing physical-world models, particularly for accurate genus-0 homeomorphic deformations that require real-time, dense, and smoothly differentiable deformation fields on manifolds. Neural dynamical systems (NDS) excel at these tasks using adaptive-stepsize numerical integration with embedded neural networks (ENNs), but causing heavy data movements and iterative stepsize searches. As a result, the NDS runtime remains on the order of hundreds of milliseconds with classical ENNs based on multi-layer perceptrons, limiting practical deployments. Here we report a low-latency NDS of sub-10ms leveraging two key attributes of phase-change memristors (PCM): conductance drift and multilevel conductance.

Publication details

Journal / source
Zenodo (CERN European Organization for Nuclear Research)
Publication date
6 May 2026
Document type
Dataset