Engineering Stable Ge/SiGe Hole Quantum Dots through Gate Dielectric Interface Optimization and Measurement-Guided Selective Post-Annealing
Abstract
Data for paper "Engineering Stable Ge/SiGe Hole Quantum Dots through Gate Dielectric Interface Optimization and Measurement-Guided Selective Post-Annealing"
Publication details
- Journal / source
- Zenodo (CERN European Organization for Nuclear Research)
- Publication date
- 6 July 2026
- Language
- EN
- Document type
- Dataset