Engineering Stable Ge/SiGe Hole Quantum Dots through Gate Dielectric Interface Optimization and Measurement-Guided Selective Post-Annealing

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Authors: Yongfeng Mai
Cited by: 1

Abstract

Data for paper "Engineering Stable Ge/SiGe Hole Quantum Dots through Gate Dielectric Interface Optimization and Measurement-Guided Selective Post-Annealing"

Publication details

Journal / source
Zenodo (CERN European Organization for Nuclear Research)
Publication date
6 July 2026
Language
EN
Document type
Dataset