High-frequency Operation of AlN-based Polarization-doped Transistors

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Authors: Seiya Kawasaki, Masanobu Hiroki, Kazuyuki Hirama, Yoshitaka Taniyasu
Cited by: 1
References: 6

Fields of Study & Subjects

GaN-based semiconductor devices and materials Acoustic Wave Resonator Technologies Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
NTT technical review
Publisher
NTT, Inc.
Volume
24
Issue
6
Pages
27–33
Publication date
1 June 2026
Language
EN