High-frequency Operation of AlN-based Polarization-doped Transistors
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Acoustic Wave Resonator Technologies
Silicon Carbide Semiconductor Technologies
Publication details
- Journal / source
- NTT technical review
- Publisher
- NTT, Inc.
- Volume
- 24
- Issue
- 6
- Pages
- 27–33
- Publication date
- 1 June 2026
- Language
- EN