Engineering of Novel Ultrawide-bandgap Nitride Semiconductors
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Ga2O3 and related materials
2D Materials and Applications
Publication details
- Journal / source
- NTT technical review
- Publisher
- NTT, Inc.
- Volume
- 24
- Issue
- 6
- Pages
- 48–53
- Publication date
- 1 June 2026
- Language
- EN