Mechanisms, simulation methods, and application analysis of carrier transport properties in doped semiconductors

The semiconductor industry has evolved through multiple generations, with doping serving as a core approach to modulate semiconductor performance. It directly determines the key performance of electronic and energy devices, and its regulatory mechanisms, simulation methods, and applications have long been research focuses of academia. Clarifying the carrier transport mechanisms in doped semiconductors is crucial for promoting the continuous advancement of devices. This study focuses on the mechanisms and applications of carrier transport in such materials, employing literature analysis, case study, and comparative analysis methods. It systematically summarizes three core regulatory rules for semiconductors: the modulation of scattering mechanisms in traditional wide-bandgap inorganic semiconductors, quantum confinement and interface characteristics of ultra-wide-bandgap two-dimensional semiconductors, and density of states optimization in organic semiconductors. Additionally, this paper sorts out the applicable scenarios and multi-field applications of the relevant technologies, refines the cross-system carrier transport theory, and provides a comprehensive and practical reference for the design of various semiconductor devices.