Designing A Low Noise Amplifier Using GaN HEMT Of 150nm Technology.

Abstract—This paper provides a report of LNA using various techniques. several articles have been published on the topic LNA. Researchers have also found the techniques to figure of merit and performance. The IOT devices required low power, high speed. Now-a-days there is a high demand for circuits which operate at high frequency and low voltage. In CMOS devices also have some limitations like high output conductance, velocity, saturation and deterioration in mobility. LNA acts as very important component of the receiver circuit and hence overall performance also increased. our main aim is to design the LNA which provides good linearity, low noise figure, and good stability and also includes good third order intercept point. Index Terms—LNA-Low Noise Amplifier, IOT-Internet Of Things , GaN-Gallium Nitride, CMOS-Complementary Metal- Oxide-Semiconductor.