Demonstration of Performance Enhancement in Semiconductor Devices Utilizing TiO₂-Based High-k Triple-Layer Dielectric
Abstract
In order to compensate for the trade-off relationship between the dielectric’s bandgap and its dielectric constant, a triple-layer dielectric structure composed of high-k dielectrics including TiO₂ was simulated. It was verified that an optimal balance between leakage current and device performance could be found by using a MOS capacitor structure with the multiple dielectric layers. Additionally, drain current analysis using a MOSFET structure confirmed that this approach can enhance electrical properties compared to using a single layer dielectric. This study suggests a process method that offers more options for satisfying device performance requirements and indicates its potential for application in various fields.
Fields of Study & Subjects
Semiconductor materials and devices
Copper Interconnects and Reliability
Advancements in Semiconductor Devices and Circuit Design
Publication details
- Journal / source
- JSTS Journal of Semiconductor Technology and Science
- Volume
- 26
- Issue
- 1
- Pages
- 24–28
- Publication date
- 28 February 2026
- Language
- EN