A Novel Parameter Extraction Technique for Off-state Equivalent Circuit Model of Body-Contact PD-SOI MOSFETs
Abstract
To directly extract the model parameters of the physical off-state small-signal equivalent circuit of body-contact PD-SOI MOSFETs, novel extraction equations are derived from Y -parameter equations approximated in both low and high-frequency regions. Unlike conventional direct extraction methods that require additional test patterns or measurements under varying bias conditions, the proposed technique enables direct extraction of all off-state equivalent circuit parameters using only a single S-parameter measurement, making it much simpler. The off-state model built with this novel extraction method shows excellent agreement with measured S-parameters in the wide bias range and the frequency range from 100 MHz to 40 GHz.
Fields of Study & Subjects
Advancements in Semiconductor Devices and Circuit Design
Electrostatic Discharge in Electronics
Ferroelectric and Negative Capacitance Devices
Publication details
- Journal / source
- JSTS Journal of Semiconductor Technology and Science
- Publisher
- The Institute of Electronics Engineers of Korea
- Volume
- 26
- Issue
- 2
- Pages
- 114–120
- Publication date
- 28 April 2026
- Language
- EN