Observation of etch pits by wet-etching of Mg2Si crystal

JJAP Conference Proceedings 2026 Open access

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Authors: Zenji Fujihisa, Kosuke Shimano, Kotaro Tetsu, Shunya Sakane, Haruhiko Udono
DOI: 10.56646/jjapcp.11.0_011001
Cited by: 0
References: 25

Abstract

Magnesium silicide (Mg2Si) is a promising material for SWIR photodetectors due to its suitable band gap and compatibility with low-cost processing. In this study, dislocations in Mg2Si single crystals were investigated using the etching observation method. Cleaved {111} surfaces were etched with a dilute HF/HNO3 solution. The resulting surface structures were analyzed using differential interference contrast microscopy, laser microscopy, scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX). The etching revealed the appearance of pits and hillocks aligned along small tilt grain boundaries (STGBs).

Fields of Study & Subjects

Advanced Semiconductor Detectors and Materials Semiconductor materials and interfaces Silicon and Solar Cell Technologies

Publication details

Journal / source
JJAP Conference Proceedings
Volume
11
Issue
0
Pages
011001–011001
Publication date
1 January 2026
Language
EN