Development of Mg2Si-Based SWIR Photodetectors via Ag Ion Implantation
Abstract
A pn-junction photodiode (PD) was fabricated on a Mg₂Si substrate using an ion implantation process. The PD, featuring an 80 µm square light detection area, was formed by implanting Ag ions as p-type impurities into the n-type Mg₂Si substrate, followed by annealing, using a conventional photolithography process. Annealing at 480 °C effectively recovered crystallinity, activated the Ag dopant, and resulted in good rectification I-V characteristics. Furthermore, the device exhibited distinct photoresponsivity in the SWIR region, with sensitivity extending up to approximately 2.1 µm. These results demonstrate that the Ag ion implantation method is a promising technology for manufacturing SWIR photodetectors, capable of precisely controlling miniaturized device structures.
Fields of Study & Subjects
Semiconductor materials and interfaces
Silicon and Solar Cell Technologies
Advanced Semiconductor Detectors and Materials
Publication details
- Journal / source
- JJAP Conference Proceedings
- Publisher
- The Japan Society of Applied Physics
- Volume
- 11
- Issue
- 0
- Pages
- 011003–011003
- Publication date
- 1 January 2026
- Language
- EN