Introduction of low-temperature BaSi2 layer for the deposition of thick BaSi2 films by vacuum evaporation
Abstract
BaSi2 is expected as a highly efficient thin film solar cell material. In this study, BaSi2 film deposition was carried out on n-type Si substrates by vacuum evaporation and properties of BaSi2 films were investigated. In BaSi2 deposition, a low-substrate-temperature layer deposited at 400 ℃ or 450 ℃ was introduced at the initial stage of deposition to reduce cracks in the obtained films. As a result of introducing a low-temperature BaSi2 layer, BaSi2 films with the thickness of more than 1 µm and with reduced cracks were obtained.
Fields of Study & Subjects
Chalcogenide Semiconductor Thin Films
Silicon and Solar Cell Technologies
Semiconductor materials and interfaces
Publication details
- Journal / source
- JJAP Conference Proceedings
- Volume
- 11
- Issue
- 0
- Pages
- 011007–011007
- Publication date
- 1 January 2026
- Language
- EN