Nanocrystalline Mg2Si Thin Films Deposited by High-Power Impulse Magnetron Co-Sputtering Using Segmented Mg-Si Target

JJAP Conference Proceedings 2026 Open access

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Authors: Hyuga Kobayashi, Daito Tanaka, H. Sugawara, Yuya Takahashi, Tetsuhide Shimizu, Tatsuro Hanajiri, Keiichi Yanagisawa, Fumitaka Sakamoto
DOI: 10.56646/jjapcp.11.0_011008
Cited by: 0
References: 17

Abstract

We report the formation of nanocrystalline Mg2Si thin films deposited using co-deposition via high-power impulse magnetron sputtering (HiPIMS) with a segmented Mg-Si target. The peak power density was estimated to be 0.26 kWcm-2. The films were deposited on heated silicon substrates at a substrate temperature set to 400 °C without a substrate bias. X-ray diffraction and X-ray photoelectron spectroscopy indicated the formation of the Mg2Si crystalline phase on the as-deposited surface without post-annealing. Scanning electron microscopy revealed a crack-free surface with nanoscale crystallites of 30–150 nm, exhibiting clear facets.

Fields of Study & Subjects

Metal and Thin Film Mechanics Advanced Materials and Semiconductor Technologies Semiconductor materials and interfaces

Publication details

Journal / source
JJAP Conference Proceedings
Volume
11
Issue
0
Pages
011008–011008
Publication date
1 January 2026
Language
EN