Analysis of Temperature-dependent Open Circuit Voltage of Mg2Si pn-junction for Thermophotovoltaic Application

JJAP Conference Proceedings 2026 Open access

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Authors: Takumi Shimizu, Hibiki Katsumata, Kousuke Shimano, Shunya Sakane, Haruhiko Udono
DOI: 10.56646/jjapcp.11.0_011010
Cited by: 0
References: 21

Abstract

To investigate the cause of the low open circuit voltage VOC in Mg2Si-TPV cells, the temperature dependence of output characteristics was examined. The experimental results revealed a VOC of 0.358 V at 100 K under irradiation from a 1310 nm single-wavelength LD, revealing the significant impact of the saturation current Is on VOC, The results indicate that reducing the Is is important to obtain a favorable VOC. TCAD simulations estimated that leakage current via recombination centers adversely affects the output characteristics of the TPV cell.

Fields of Study & Subjects

Advanced Thermoelectric Materials and Devices Thermal Radiation and Cooling Technologies Advanced Energy Technologies and Civil Engineering Innovations

Publication details

Journal / source
JJAP Conference Proceedings
Volume
11
Issue
0
Pages
011010–011010
Publication date
1 January 2026
Language
EN